Progress on and challenges of p-type formation for GaN power …
Sep 2, 2020 · In Sec. II, we discuss the growth of a lightly Mg-doped GaN layer by metalorganic vapor phase epitaxy (MOVPE) and demonstrate that carbon atoms compensate holes in a p …
Process engineering of GaN power devices via selective-area p-type ...
Oct 7, 2022 · P-type doping in selected areas of gallium nitride (GaN) using magnesium (Mg)-ion implantation and subsequent ultra-high-pressure annealing (UHPA) are investigated to …
A low-cost and convenient route of fabricating GaN films with P-type ...
Aug 14, 2024 · In addition, the sputtered GaN films were found to be wide-bandgap and p-type semiconductors with high transmittance, as revealed by x-ray photoelectron spectroscopy and …
Review on Main Gate Characteristics of P-Type GaN Gate High …
Currently, the most commonly used methods for fabricating enhanced-mode GaN-based HEMT devices primarily include adopting a grooved-gate structure, implanting a fluorine ion, and …
Realization of p-type gallium nitride by magnesium ion ... - Nature
Jun 19, 2019 · In this work, we demonstrate successful p-type doping of GaN using protective coatings during a Mg ion implantation and thermal activation process. The p-type conduction …
A robust Ni/Au process and mechanism for p-type ohmic contact …
Mar 25, 2024 · In this study, a new robust ohmic contact preparation process for GaN p-FETs application is developed on p-GaN/AlGaN/GaN, which excluded the commonly used descum …
Challenges and advancements in p-GaN gate based high electron …
Oct 2, 2024 · This comprehensive review discusses the challenges in the fabrication processes and device structures of p-type GaN (p-GaN) gate HEMTs on silicon substrates.
Transparent (Ni,Au)/ZnO:Al-Based Ohmic Contacts to p-Type GaN …
Oct 28, 2024 · Transparent (Ni,Au)/ZnO:Al-Based Ohmic Contacts to p-Type GaN as an Insight into the Role of Ni and Au in Standard p-Type GaN Contacts. In this work, Ni/ZnO:Al and …
Electrochemical etching of p-type GaN using a tunnel junction for ...
Aug 1, 2022 · In this work electrochemical etching (ECE) of p-type GaN under constant bias without an external light source is demonstrated for the first time. A tunnel junction (TJ) was …
P-type doping of GaN by magnesium ion implantation
Dec 1, 2016 · To overcome these difficulties, in the present paper, we propose a method of implanting Mg ions into the nitrogen-polar GaN face, which is thermally more stable than the …