FAE has developed a universal attachment plate, which makes the RCU75 compatible with a range of compact equipment ...

This work discusses the challenges in the design of a SiC Power MOSFET compared to their silicon-based relatives and describes a novel SiC Trench MOSFET concept. The most prominent difficulties being ...

The application of silicon carbide (SiC) MOSFETs in the field of high voltage and high frequency brings the major challenge of high switching loss. To give full advantage of its performance in ...