Qorvo’s QPA1314 is a packaged high power MMIC amplifier, fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). QPA1314 is targeted for 13.75 – 14.5 GHz Satcom band.

AST SpaceMobile Announces Settlement Term Sheet Facilitating Long-Term Access to up to 45 MHz of Premium Lower Mid-Band Spectrum in North America for Direct-to-Device Satellite Applications ...

In this study, the thermal characteristics and structure reliability during power cycling for the four types of SiC power module fabricated using a SiC-heater chip, direct bonded aluminum (DBA) ...

Mitsubishi Electric Corporation announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor embedded with a Schottky barrier diode ...

The crystal structure of SiC and GaN can be in the cubic zinc sulphide structure. The binding energy and lattice pitch determine the bandgap.

1. The Qorvo QPA2511 GaN-on-SiC power-amplifier module is a two-stage design delivering 100 W in the L-band. Qorvo maintains this is highest-gain, 100-W output L-band compact solution available.

This article outlines the energy band structure of InAs/GaSb SLs, describes in detail several theoretical simulation methods of solid energy band commonly used for studying SL energy band structures, ...

SiC, a semiconductor compound consisting of silicon and carbon, belongs to the wide-bandgap family of materials. Its physical bond is very strong, giving the semiconductor a high mechanical, chemical, ...