Rohm BSM180D12P3C007 Trench SiC MOSFET Structure and Cost Analysis Report - Research and Markets June 27, 2017 12:07 PM Eastern Daylight Time. DUBLIN-- (BUSINESS ...

Mitsubishi Electric Corporation announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor embedded with a Schottky barrier diode ...

The company's GaN-on-SiC high-pulsed power transistors deliver industry-leading peak power and power gain for radar systems operating in the 2.7 GHz to 3.5 GHz frequency band. IE 11 is not supported.

Katzmarek, David, Andrea Mancini, Stefan Maier, and Francesca Iacopi. “Direct synthesis of nanopatterned epitaxial graphene on silicon carbide.” Nanotechnology (2023). Related Reading High-NA ...