D ferroelectric memory stores data with zero power. Discover how this breakthrough tech could revolutionize AI, edge devices, and low-power storage solutions.

ALD’s new SAB MOSFET achieves higher power management standards for supercapacitors rated 3V or more. Advanced Linear Devices Inc. (ALD), a pioneering force in analog semiconductor design, has ...

ADVANCED LINEAR DEVICES ALD910030 Supercapacitor Auto-Balancing (SAB) MOSFET provides improved auto-balancing capabilities and power management for supercapacitors ranging from 2.8V to 3.3V. Device ...

Advanced Linear Devices Inc. (ALD) announced its latest addition to its Supercapacitor Auto-Balancing (SAB™) MOSFET family. This dual MOSFET provides unmatched auto-balancing capabilities and power ...

Abstract: Compared with silicon (Si) devices, silicon carbide (SiC) MOSFETs have faster switching speed and lower switching loss, which makes them better candidates for high voltage and high frequency ...

What just happened? Intel and SK hynix have finalized an $8.85 billion deal that transfers Intel's NAND flash memory business to the South Korean semiconductor giant, marking the completion of a ...

The 60-V P-channel MOSFET, shown in Figure 1, complements Infineon’s existing 60-V and 150-V N-channel devices. Unlike traditional rad-hardened devices that rely on hermetic—typically ...

Abstract: This paper investigates the single event effects (SEE) in SiC MOSFET integrated with a junction barrier diode (JMOS). During irradiation experiments, JMOS exhibited drain-to-source leakage ...

Renesas has introduced 100V high-power N-Channel MOSFETs that claim to deliver industry-leading high-current switching performance. Renesas has developed a new MOSFET wafer manufacturing process ...

In the context of new energy electric vehicles (NEEVs), the wide-bandgap semiconductor known as the silicon carbide–metal oxide–semiconductor field-effect transistor (SiC MOSFET) and the permanent ...