The BSM180D12P3C007 integrates the third generation high-voltage SiC power MOSFET dies with a current of 36A and the innovative trench structure.

Mitsubishi Electric Corporation announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor embedded with a Schottky barrier diode ...

Microsemi has leveraged its industry-leading expertise in S-band RF power transistors to create a family of GaN-on-SiC solutions that are tailored to support the requirements of next-generation ...

A technical paper titled “Direct synthesis of nanopatterned epitaxial graphene on silicon carbide” was published by researchers at University of Technology Sydney, Ludwig-Maxilimians Universität ...

We demonstrate the growth of high quality graphene layers by chemical vapor deposition (CVD) on insulating and conductive SiC substrates. This method provides key advantages over the well-developed ...