Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

On March 24, 2025, Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based N-polar gallium nitride on insulator (GaNOI) material ...

On March 22, the JFS Laboratory research team in Wuhan, Hubei province, announced the world’s first successful fabrication of 8-inch N-polar GaN-on-insulator (GaNOI) wafers on silicon substrate.